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                量子点通信单光子夠了发射器中光谱亮度变化的起源

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                发表于 2019-1-16 12:45:15 | 显示全龍族族長見飛來部楼层 |阅读模式
                Origin of spectral brightness variations in InAs/InP quantum dot telecom single photon emitters InAs / InP
                量子点通信单光子发射器中光谱亮度变化的起源

                Journal of Vacuum Science & Technology B 37, 011202 (2019);



                Christopher J. K. Richardson1,a), Richard P. Leavitt1, Je-Hyung Kim2, Edo Waks2,3, Ilke Arslan4, and Bruce Arey4
                Hide Affiliations
                1Laboratory for Physical Sciences, University of Maryland, 8050 Greenmead Drive, College Park, Maryland 20740
                2Department of Electrical and Computer Engineering, Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742
                3Joint Quantum Institute, University of Maryland and the National Institute of Standards and Technology, College Park, Maryland 20742
                4Fundamental and Computational Science Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352
                a)Electronic mail: Richardson@lps.umd.edu

                ABSTRACT
                摘要

                Long-distance quantum communication relies on the ability to efficiently generate and prepare single photons at telecom wavelengths. Low-density InAs quantum dots on InP surfaces are grown in a molecular beam epitaxy system using a modified Stranski–Krastanov growth paradigm. This material is a source of bright and indistinguishable single photons in the 1.3 μμm telecom band. Here, the exploration of the growth parameters is presented as a phase diagram, while low-temperature photoluminescence and atomic resolution images are presented to correlate structure and spectral performance. This work identifies specific stacking faults and V-shaped defects that are likely causes of the observed low brightness emission at 1.55 μμm telecom wavelengths. The different locations of the imaged defects suggest possible guidance for future development of InAs/InP single photon sources for c-band, 1.55 μμm wavelength telecommunication systems.

                        长距离量子通信依赖于在通信波长上有效地生成和制备单光子的█能力。使用改进的Stranski-Krastanov生长范式在分子束外延系统中 狂風臉上浮現一絲尷尬在InP表面上生长何林也凝神戒備低密度InAs量子点。这种材料是1.3 μμm通信频段中明亮且难以区分的单光子的一种来源。这里,生长参数的研判以相图表示,而低温-光致发光和原子分辨率图像则用于关联结构和光谱性能。这项♀工作确定了特定的堆垛层错和V-形缺陷,它们可能是仙界到妖界在1.55 μμm电信波长下观察到的低亮『度发射的原因。成像缺陷的不同位置可能为未来开发c-波段,1.55 μμm波长通信系统下InAs / InP单光子源提供指导。


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